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Breeze Series In-Situ Holders(Heating)

Product Features

By applying thermal field control to the sample through MEMS chips, combined with various modes such as EDS, EELS, SAED, HRTEM, STEM, etc., key information such as microstructure evolution, reaction kinetics, phase transition, element valence, chemical changes, microstresses, and atomic level structure and composition evolution at the surface/interface of the sample can be monitored in real-time and dynamically at the nano or even atomic level in a gas environment.

  • Product composition
  • Unique Advantages
  • Functional Parameters
  • Application

    a.Breeze Series In-Situ Holders(Heating)
    b.MEMS Heating Gas Cell Chip
    c.Thermal Controller
    d.Software of Thermal Controller
    e.High Vacuum Leak Checking Station
    f.In-situ Nanofluidic Control System (Gas)
    g.High-precision Chip Assembly Instrument
    h.Accessory Package




    High resolution in gas environments ·1.Using the original MEMS processing technology, the thickness of silicon nitride film in the chip window area can reach 10nm.
    ·2.The chip packaging adopts a double insurance method of bonding inner seal and epoxy resin outer seal, making the thinnest interlayer between the chips only about 100-200 nm. The ultra-thin interlayer greatly reduces interference with the electron beam, allowing for clear observation of the atomic arrangement of the sample, and achieving atomic level resolution in the gas environment.
    High security ·1.Adopting patented nanofluidic technology, fluid differential control is achieved through a piezoelectric micro control system to achieve nano upgraded micro fluid transportation. The redundant gas volume in the in-situ nanofluidic system and sample holder is only slightly increased, effectively ensuring the safety of the electron microscope.
    ·2.Adopt the polymer membrane surface contact sealing technology,compared with the O-ring sealing,the sealing contact area is incre ased,effectively reduce the risk of leakage.
    ·3.Using ultra-high temperature coating technology, the silicon nitride film in the window area of the chip has advantages such as high temperature resistance,low stress,pressure resistance, corrosion resistance,and radiation resistance.
    Excellent thermal performance ·1.High precision infrared temperature calibration,micron level high resolution thermal field measure ment and calibration,to ensure the accuracy of temperature.

    ·2.The UHF temperature control mode with two electrodes can eliminate the influence of wire and contact resistance, and the temperature and electrical parameters can be measured more accurately.

    ·3.The high stability have precious metal heating wire (non-ceramic material) , it is not only a thermal guide material but also a thermal sensitive material. Its resistance has a good linear relationship with temperature.The heating area covers the whole observation area,and the heating and cooling speed is fast,and the thermal field is stable and uniform.Temperature fluctuation in steady state is less than±0.01℃.
    ·4.Adopt the closed loop high-frequency dynamic control and feedback of ambient temperature control method,high-frequency feedback control to eliminate errors, achieving temperature control accuracy of ±0.01°C.
    ·5.Unique multi-stage composite heating MEMS chip design,by controlling the heat diffusion during heating process,greatly inhibit the heat drift during heating process, and ensure the efficient observation of the experiment .







  • Category Index Numerical value
    Basic parameters Shaft material High strength titanium alloy
    Film thickness 20nm(standard) or 10nm(upgradeable)
    Applicable TEM brand Thermo Fisher/FEI, JEOL, Hitachi
    Applicable pole piece types ST, XT, T, BioT, HRP, HTP, CRP,FHP,WGP
    (HR)EDS/EELS/SAED Available
    (HR)TEM/STEM Available



    Learn more

  • Morphology changes of a few selected PbSe nanocrystals when partially exposed to air. Sequential TEM images showing the mor- phology changes of (a) single, (b) two, and (c) three PbSe nano- crystals when partially exposed to air. (d) The projected area of the selected nanocrystals versus time shown in (a). (e) Schematics highlight the morphological evolution of PbSe nanocrystals observed in (a)‒(c). All PbSe nanocrystals eventually form thin films by solid-state fusion. Scale bar: 20 nm

    PbSe nanocrystals after baking at 200 °C in air. (a) Low and (b) high magnification TEM images of PbSe nanocrystals after baking in air at 200 ° C for 2 h. The inset is the FFT pattern of the selected area in (b) showing the existence of small PbSe nanocrystals. (c) Low and (d) highmagnification TEM images of PbSe nanocrystals after baking in air at 200 ° C for 12 h. The inset is the FFT pattern of the selected area in (d) indicating the amorphous structure. (e) STEM image and EDS elemental maps of PbSe nanocrystals after baking in air at 200 ° C for 12 h. Scale bars for images (a), (c), and (e) are 20 nm. Scale bars for images (b) and (d) are 2 nm

    In Situ TEM Study of the Degradation of PbSe Nanocrystals in Air Chemistry of Materials 31(1) (2019) 190-199.



    Reduction of ferric oxide in the on-chip reaction nanolab. Image sequences of ferric oxide at different temperatures in hydrogen and STEM
    image after reaction.


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